Saturday, July 30, 2011

Nanoribbons for Graphene Transistors


In the recent issue of Nature, scientists from Empa and the Max Planck Institute for Polymer Research report how they have managed for the first time to grow graphene ribbons that are just a few nanometers wide using a simple surface-based chemical method. Graphene ribbons are considered to be «hot candidates» for future electronics applications as their properties can be adjusted through width and edge shape.

Transistors on the basis of graphene are considered to be potential successors for the silicon components currently in use. Graphene consists of two-dimensional carbon layers and possesses a number of outstanding properties: it is not only harder than diamond, extremely tear-resistant and impermeable to gases, but it is also an excellent electrical and thermal conductor. However, as graphene is a semi-metal it lacks, in contrast to silicon, an electronic band gap and therefore has no switching capability which is essential for electronics applications. Scientists from Empa, the Max Planck Institute for Polymer Research in Mainz (Germany), ETH Zürich and the Universities of Zürich und Bern have now developed a new method for creating graphene ribbons with band gaps.

No comments:

Post a Comment