Novel Semiconductor Devices

An example of such novel devices is based on spintronics.The dependence of the resistance of a material (due to the spin of the electrons) on an external field is called magneto resistance. This effect can be significantly amplified (GMR - Giant Magneto-Resistance) for nanosized objects, for example when two ferromagnetic layers are separated by a nonmagnetic layer, which is several nanometers thick (e.g. Co-Cu-Co). The GMR effect has led to a strong increase in the data storage density of hard disks and made the gigabyte range possible. The so called tunneling magneto resistance (TMR) is very similar to GMR and based on the spin dependent tunneling of electrons through adjacent ferromagnetic layers. Both GMR and TMR effects can be used to create a non-volatile main memory for computers, such as the so called magnetic random access memory or MRAM.
In 1999, the ultimate CMOS transistor developed at the Laboratory for Electronics and Information Technology in Grenoble, France, tested the limits of the principles of the MOSFET transistor with a diameter of 18 nm (approximately 70 atoms placed side by side). This was almost one tenth the size of the smallest industrial transistor in 2003 (130 nm in 2003, 90 nm in 2004, 65 nm in 2005 and 45 nm in 2007). It enabled the theoretical integration of seven billion junctions on a €1 coin. However, the CMOS transistor, which was created in 1999, was not a simple research experiment to study how CMOS technology functions, but rather a demonstration of how this technology functions now that we ourselves are getting ever closer to working on a molecular scale. Today it would be impossible to master the coordinated assembly of a large number of these transistors on a circuit and it would also be impossible to create this on an industrial level.^[7]